研究興趣：

• Material Growth and Device Applications of 2-D Crystals
• Molecular Beam Epitaxy, Optoelectronic Devices

經歷：

• 中央科學院應用科學研究中心研究員（2016.5-）
• 國立台灣大學電子工程學研究所副教授（2016.8-）
• 國立成功大學電氣工程學系兼任教授（2017.2-）
• 國立東華大學材料科學與工程系兼任教授（2016.8-）
• 國家科學院優秀青年學者研究計畫（2013.8-2016.7）
• IEEE高級會員（2012.8-）
• 100名年度優秀青年工程師，傑出青年工程師（2011年，中國工程師學會中國工程師學會）
• 潘文遠基金會客座科學家獎學金（2005年）

精選出版物：

• Yu-Wei Zhang, Bo-Yu Wu, Kuan-Chao Chen, Chao-Hsin Wu, and Shih-Yen Lin*, “Highly Conductive Nanometer-Thick Gold Films Grown on Molybdenum Disulfide Surfaces for Interconnect Applications”, Sci. Rep., vol. 10, pp. 14463, September 2020.
• [ DOI:10.1038/s41598-020-71520-x ]
• Khoe Van Nguyen, Shih-Yen Lin, Yia-Chung Chang*, “Transfer current in p-type graphene/MoS2 heterostructures”, Physica E Low Dimens. Syst. Nanostruct., vol. 125, pp. 114383 January 2021.
  [ DOI:10.1016/j.physe.2020.114383 ]
• Po-Cheng Tsai, Hon-Chin Huang, Chun-Wei Huang, Shoou-Jinn Chang, and Shih-Yen Lin*, “Luminescence Enhancement and Dual-Color Emission of Stacked Mono-layer 2D Materials”, Nanotechnology, vol. 31, no. 36, pp. 365702 June 2020.
  [ DOI:10.1088/1361-6528/ab95b5 ]
• Bora Kim, Jayeong Kim, Po-Cheng Tsai, Soyeong Kwon, Eunah Kim, Seokhyun Yoon, Shih-Yen Lin, and Dong-Wook Kim*, “Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates”, Phys. Status Solidi A, vol. 217, no. 10, pp. 2000033 May 2020.
  [ DOI:10.1002/pssa.202000033 ]
• Hsu-Sheng Tsai, Yung-Hung Huang, Po-Cheng Tsai, Yi-Jia Chen, Hyeyoung Ahn, Shih-Yen Lin, Yu-Jung Lu*, “Ultrafast Exciton Dynamics in Scalable Monolayer MoS2 Synthesized by Metal Sulfurization”, ACS Omega, vol. 5, no. 19, pp. 10725-10730 May 2020.
  [ DOI:10.1021/acsomega.0c00187 ]
• Yu-Wei Zhang, Jun-Yan Li, Chao-Hsin Wu, Chiao-Yun Chang, Shu-Wei Chang, Min-Hsiung Shih and Shih-Yen Lin*, “Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures”, Sci. Rep., vol. 10, pp. 5967, April 2020.
  [ DOI:10.1038/s41598-020-63098-1 ]
• Kuan-Chao Chen, Syuan-Miao Lai, Bo-Yu Wu, Chi Chen*, and Shih-Yen Lin*, “Van der Waals Epitaxy of Large-area and Single-crystalline Gold Films on MoS2 for Low-Contact-Resistance 2D-3D Interfaces”, ACS Appl. Nano Mater., vol. 3, no. 3, pp. 2997-3003, March 2020.
  [ DOI:10.1021/acsanm.0c00262 ]
• Hsiang-Ting Lin, Kung-Shu Hsu, Chih-Chi Chang, Wei-Hsun Lin, Shih-Yen Lin, Shu-Wei Chang, Yia-Chung Chang and Min-Hsiung Shih*, “Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material”, Sci. Rep., vol. 10, 4757, March 2020.
  [ DOI:10.1038/s41598-020-61539-5 ]
• Kuan-Chao Chen, Lun-Ming Lee, Hsuan-An Chen, Hsu Sun, Cheng-Lun Wu, Hsin-An Chen, Kuan-Bo Lin, Yen-Chun Tseng, Chao-Cheng Kaun, Chun-Wei Pao, and Shih-Yen Lin*, “Multi-layer elemental 2D materials: antimonene, germanene and stanene grown directly on molybdenum disulfides”, Semicond. Sci. Technol., vol. 34, no. 10, pp. 105020, September 2019.
  [ DOI:10.1088/1361-6641/ab3c8a ]
• Chiao-Yun Chang, Hsiang-Ting Lin, Ming-Sheng Lai, Cheng-Li Yu, Chong-Rong Wu, He-Chun Chou, Shih-Yen Lin, Chi Chen, Min-Hsiung Shih*, “A Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitter on a Three-Dimensional Substrate”, ACS Appl. Mater. Interfaces, vol. 11, no. 29, pp.26243-26249, June 2019.
  [ DOI:10.1021/acsami.9b05082 ]
• Kuan-Chao Chen, Chia-Wei Liu, Chi Chen* and Shih-Yen Lin*, “The Atomic Layer Etching Mechanisms of Molybdenum Disulfides by Using Oxygen Plasma”, Semicond. Sci. Technol. vol. 34, no. 4, pp. 045007 March 2019.
  [ DOI:10.1088/1361-6641/ab0711 ]
• Kuan-Chao Chen, Cing-Yu Jian, Yi-Jia Chen, Si-Chen Lee, Shu-Wei Chang*, and Shih-Yen Lin*, “Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-layer WxMo1-xS2”, ACS Appl. Mater. Interfaces, vol. 10, no. 29, pp. 24733-24738, July 2018.
  [ DOI:10.1021/acsami.8b06327 ]
• Hsuan-An Chen, Hsu Sun, Chong-Rong Wu, Yu-Xuan Wang, Po-Hsiang Lee, Chun-Wei Pao, and Shih-Yen Lin*, “Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure”, ACS Appl. Mater. Interfaces, vol. 10, no. 17, pp. 15058–15064, May 2018.
  [ DOI:10.1021/acsami.8b02394 ]
• Chi-Ti Hsieh, Shih-Yen Lin, and Shu-Wei Chang*, “Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings”, IEEE J. Sel. Topics Quantum Electron., vol. 24, no. 2, pp. 1900307, March/April 2018.
  [ DOI:10.1109/JSTQE.2017.2736438 ]
• Hsuan-An Chen, Wei-Chan Chen, Hsu Sun, Chien-Chung Lin and Shih-Yen Lin*, “Scalable MoS2/Graphene Hetero-structures Grown Epitaxially on Sapphire Substrates for Phototransistor Applications”, Semicond. Sci. Technol., vol. 33, no. 2, pp. 025007, January 2018.
  [ DOI:10.1088/1361-6641/aaa3b7 ]
• Chong-Rong Wu, Tung-Wei Chu, Kuan-Chao Chen, and Shih-Yen Lin*, “Preparation of Large-Area Vertical 2D Crystal Hetero-Structures Through the Sulfurization of Transition Metal Films for Device Fabrication”, J. Vis. Exp., vol. 129, e56494, doi:10.3791/56494, November 2017 (invited paper).
  [ DOI:10.3791/56494 ]
• Hsuan-An Chen, Hsuan-Yu Chen, Wei-Chan Chen, and Shih-Yen Lin*, “Type-II Superlattice Infrared Photodetectors with Graphene Transparent Electrodes”, IEEE Photonics Technology Lett., vol. 29, no. 19, pp. 1691 – 1694, October 2017.
  [ DOI:10.1109/LPT.2017.2743619 ]
• Kuan-Chao Chen, Tung-Wei Chu, Chong-Rong Wu, Si-Chen Lee and Shih-Yen Lin*, “Atomic Layer Etchings of Transition Metal Dichalcogenides with Post Healing Procedures: Equivalent Selective Etching of 2D Crystal Hetero-structures”, 2D Materials, vol. 4, no. 3, pp. 034001, June 2017.
  [ DOI:10.1088/2053-1583/aa75a7 ]
• Chong-Rong Wu, Xiang-Rui Chang, Chao-Hsin Wu, and Shih-Yen Lin*, “The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment”, Sci. Rep. vol. 7, pp. 42146, February 2017.
  [ DOI:10.1038/srep42146 ]
• Hsuan-An Chen, Wei-Hsun Lin, Chiao-Yun Chang, Shu-Wei Chang, Min-Hsiung Shih, and Shih-Yen Lin*, “Type-I to Type-II Transformation of Hybrid Quantum Nanostructures”, IEEE J. Sel. Topics Quantum Electron., vol. 23, no. 5, pp. 1900407, September/October 2017.
  [ DOI:10.1109/JSTQE.2016.2629085 ]
• Kuan-Chao Chen, Tung-Wei Chu, Chong-Rong Wu, Si-Chen Lee, and Shih-Yen Lin*, “Layer Number Controllability of Transition-metal Dichalcogenides and The Establishment of Hetero-structures by Using Sulfurization of Thin Transition Metal Films”, J. of Phys. D: Appl. Phy., J. of Phys. D: Appl. Phy., vol. 50, no. 6, pp. 064001, February 2017.
  [ DOI:10.1088/1361-6463/aa52b6 ]
• Chong-Rong Wu, Kun-Cheng Liao, Chao-Hsin Wu, and Shih-Yen Lin*, “Luminescence Enhancement and Enlarged Dirac Point Shift of MoS2/Graphene Hetero-structure Photodetectors with Post-Growth Annealing Treatment”, Journal of Selected Topics in Quantum Electronics, vol. 23, no. 1, pp. 3800105, Jan.-Feb. 2017.
  [ DOI:10.1109/JSTQE.2016.2577519 ]
• Chong-Rong Wu, Kun Peng Dou, Cheng-Hung Wang, Chung-En Chang, Chao-Cheng Kaun, Chao-Hsin Wu and Shih-Yen Lin*, “Dual-Cut Graphene Transistors with Constant-current Regions Fabricated by Using the Atomic Force Microscope Anode Oxidation”, Jpn. J. Appl. Phys., vol. 56, no. 1, pp. 010307, January 2017.
  [ DOI:10.7567/JJAP.56.010307 ]
• Chong-Rong Wu, Xiang-Rui Chang, Tung-Wei Chu, Hsuan-An Chen, Chao-Hsin Wu, and Shih-Yen Lin*, “Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth”, Nano Lett., vol. 16, no. 11, pp. 7093-7097, November 2016.
  [ DOI:10.1021/acs.nanolett.6b03353 ]
• Kuan-Chao Chen, Chong-Rong Wu, Xiang-Rui Chang, Shu-Wei Chang, Si-Chen Lee, and Shih-Yen Lin*, “Enhancement of field-effect mobility in molybdenum-disulfide transistor through the treatment of low-power oxygen plasma”, Jpn. J. Appl. Phys., vol. 55, no. 9, pp. 090302, September 2016.
  [ DOI:10.7567/JJAP.55.090302 ]
• Hsuan-An Chen, Tung-Chuan Shih, Hsuan-You Chen and Shih-Yen Lin*, “Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas”, Jpn. J. Appl. Phys., vol. 55, pp. 04EH07, March 2016.
  [ DOI:10.7567/JJAP.55.04EH07 ]
• Lung-Hsing Hsu, Chien-Ting Kuo, Jhih-Kai Huang, Shun-Chieh Hsu, Hsin-Ying Lee, Hao-Chung Kuo, Po-Tsung Lee, Yu-Lin Tsai, Yi-Chia Hwang, Chen-Feng Su, Jr-Hau He, Shih-Yen Lin, Yuh-Jen Cheng, and Chien-Chung Lin*, “An InN-Based Heterojunction Photodetector with Extended Infrared Response”, Optics Express, vol. 23, no. 24, pp. 31150-31162, November 2015.
  [ DOI:10.1364/OE.23.031150 ]
• Chong-Rong Wu, Xiang-Rui Chang, Shu-Wei Chang, Chung-En Chang, Chao-Hsin Wu, and Shih-Yen Lin*, “Multilayer MoS₂ Prepared by One-time and Repeated Chemical Vapor Depositions: Anomalous Raman Shifts and Transistors with High ON/OFF Ratio”, J. of Phys. D: Appl. Phy., vol. 48, no. 43, pp. 435101, November 2015.
  [ DOI:10.1088/0022-3727/48/43/435101 ]
• Kung-Shu Hsu, Wei-Chun Hung, Chih-Chi Chang, Wei-Hsun Lin, Min-Hsiung Shih*, Po-Tsung Lee, Shih-Yen Lin, Shu-Wei Chang, and Yia-Chung Chang, “Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity”, Applied Phys. Lett. vol. 107, no. 9, pp. 091113, August 2015
  [ DOI:10.1063/1.4929948 ]
• Cheng-Han Wu, Hsuan-An Chen, Shih-Yen Lin and Chao-Hsin Wu* “1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy”, Optics Letters, vol. 40, no. 16, pp. 3747-3749, August 2015.
  [ DOI:10.1364/OL.40.003747 ]
• Meng-Yu Lin, Cheng-Hung Wang, Shu-Wei Chang, Si-Chen Lee, and Shih-Yen Lin*, “Passivated Graphene Transistors Fabricated on Millimeter-sized Single-Crystal Graphene Film Prepared with Chemical Vapor Deposition”, J. of Phys. D: Appl. Phy., vol. 48, no. 29, pp. 295106, July 2015.
  [ DOI:10.1088/0022-3727/48/29/295106 ]
• Hsuan-An Chen, Tung- Chuan Shih, Shiang-Feng Tang, Ping-Kuo Weng, Yau-Tang Gau, and Shih-Yen Lin*, “GaSb/GaAs Quantum Dots and Rings Grown under Periodical Growth Mode by Using Molecular Beam Epitaxy”, J. Crystal Growth, vol. 425, no. 1, pp. 283-286, September 2015.
  [ DOI:10.1016/j.jcrysgro.2015.03.053 ]
• Meng-Yu Lin, Cheng-Hung Wang, Chun-Wei Pao, and Shih-Yen Lin*, “Transferring-Free and Large-Area Graphitic Carbon Film Growth by Using Molecular Beam Epitaxy at Low Growth Temperature”, J. Crystal Growth, vol. 425, no. 1, pp. 177-180, September 2015.
  [ DOI:10.1016/j.jcrysgro.2015.02.039 ]
• Hsuan-An Chen, Tung-Chuan Shih and Shih-Yen Lin*, "Long-Wavelength In-plane Gate InAs Quantum-Dot Photo-Transistors", IEEE Photonics Technology Lett., vol. 27, no. 3, pp. 261-263, February 2015.
  [ DOI:10.1109/LPT.2014.2367515 ]
• Meng-Yu Lin, Chung-En Chang, Cheng-Hung Wang, Chen-Fung Su, Chi Chen, Si-Chen Lee, and Shih-Yen Lin*, “Toward Epitaxially Grown Two-Dimensional Crystal Hetero-Structures: Single and Double MoS₂/Graphene Hetero-Structures by Chemical Vapor Depositions”, Appl. Phys. Lett. vol. 105, no. 7, pp. 073501, August 2014.
  [ DOI:10.1063/1.4893448 ]
• Meng-Yu Lin, Chen-Fung Su, Si-Chen Lee, and Shih-Yen Lin*, “The Growth Mechanisms of Graphene Directly on Sapphire Substrates by Using the Chemical Vapor Deposition”, J. Appl. Phys., vol. 115, no. 22, pp. 223510, June 2014.
  [ DOI:10.1063/1.4883359 ]
• Meng-Yu Lin, Yen-Hao Chen, Cheng-Hung Wang, Chen-Fung Su, Shu-Wei Chang*, Si-Chen Lee, and Shih-Yen Lin*, “Field Effect of In-plane Gates with Different Gap Sizes on the Fermi Level Tuning of Graphene Channels”, Appl. Phys. Lett. vol. 104, no. 18, pp. 183503, May 2014.
  [ DOI:10.1063/1.4875583 ]
• Che-Pin Tsai, Shun-Chieh Hsu, Shih-Yen Lin, Ching-Wen Chang, Li-Wei Tu, Kun-Cheng Chen, Tsong-Sheng Lay, and Chien-Chung Lin*, “Type II GaSb quantum ring solar cells under concentrated sunlight”, Optics Express vol. 22, no. S2, pp. A359–A364, March 2014.
  [ DOI:10.1364/OE.22.00A359 ]
• Shiang-Feng Tang, Tzu-Chiang Chen, Wen-Jen Lin* and Shih-Yen Lin, “High Temperature Operation In(Ga)As Quantum Dot Infrared Photodetector Focal Plane Arrays Passivated with 6.5 nm-thick Al₂O₃ Layer”, International Journal of Nanotechnology, vol. 11, no. 1-4, pp. 345-358, March 2014.
  [ DOI:10.1504/IJNT.2014.059835 ]
• Meng-Yu Lin, Yen-Hao Chen, Chen-Fung Su, Shu-Wei Chang, Si-Chen Lee, and Shih-Yen Lin*, “Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips”, Appl. Phys. Lett. vol. 104, no. 2, pp. 023511, January 2014.
  [ DOI:10.1063/1.4862275 ]
• Jheng-Han Lee, Zong-Ming Wu, Yu-Min Liao, Yuh-Renn Wu, Shih-Yen Lin, and Si-Chen Lee*, “The operation principle of the well in quantum dot stack infrared photodetector”, J. Appl. Phys. vol. 114, no. 24, pp. 244504, December 2013.
  [ DOI:10.1063/1.4849875 ]
• Yu-An Liao, Yi-Kai Chao, Shu-Wei Chang*, Wen-Hao Chang, Jen-Inn Chyi and Shih-Yen Lin*, “Memory Device Application of Wide-channel In-plane Gate Transistors with Type-II GaAsSb-capped InAs Quantum Dots”, Appl. Phys. Lett. vol. 103, no. 14, pp. 143502, September 2013.
  [ DOI:10.1063/1.4824067 ]
• T. Nowozin, A. Wiengarten, L. Bonato, D. Bimberg*, Wei-Hsun Lin, Shih-Yen Lin, M. N. Ajour, K. Daqrouq, and A. S. Balamesh, “Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots”, Journal of Nanotechnology vol. 2013, Article ID 302647, 5 pages (2013).
  [ DOI:10.1155/2013/302647 ]
• Wei-Hsun Lin, Kai-Wei Wang, Yu-An Liao, Chun-Wei Pao and Shih-Yen Lin*, “The Formation Mechanisms and Optical Characteristics of GaSb Quantum Rings”, J. Appl. Phys. vol. 114, no. 5, pp. 053509, August 2013.
  [ DOI:10.1063/1.4817419 ]
• Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Si-Chen Lee and Shih-Yen Lin*, “Graphene Films Grown at Low Substrate Temperature and The Growth Model by Using MBE Technique”, J. Crystal Growth vol. 378, no. 1, pp. 333-336, September 2013.
  [ DOI:10.1016/j.jcrysgro.2012.12.068 ]
• Wei-Hsun Lin, Kai-Wei Wang, Shih-Yen Lin* and Meng-Chyi Wu, “Long-Wavelength Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum-Rings at Room Temperature”, J. Crystal Growth vol. 378, no. 1, pp. 571-575, September 2013.
  [ DOI:10.1016/j.jcrysgro.2012.12.066 ]
• Wei-Hsun Lin, Kai-Wei Wang, Shih-Yen Lin* and Meng-Chyi Wu, “Temperature-Dependent Photoluminescence and Carrier Dynamics of Standard and Coupled Type-II GaSb/GaAs Quantum Rings”, J. Crystal Growth vol. 378, no. 1, pp. 426-429, September 2013.
  [ DOI:10.1016/j.jcrysgro.2012.12.069 ]
• Yu-An Liao, Wei-Hsun Lin, Yi-Kai Chao, Wen-Hao Chang, Jen-Inn Chyi, and Shih-Yen Lin*, “In-Plane Gate Transistors for Photodetector Applications”, IEEE Electron Device Lett. vol. 34, no. 6, pp. 780-782, June 2013.
  [ DOI:10.1109/LED.2013.2258456 ]
• T. Nowozin, L. Bonato, Hogner, A. Wiengarten, D. Bimberg, Wei-Hsun Lin, Shih-Yen Lin, C. J. Reyner, Baolai L. Liang, and D. L. Huffaker, “800meV localization energy in GaSb/GaAs/Al_0.3Ga_0.7As quantum dots”, Appl. Phys. Lett. vol. 102, no. 5, pp. 052115, February 2013.
  [ DOI:10.1063/1.4791678 ]
• Wei-Hsun Lin, Kai-Wei Wang, Shih-Yen Lin* and Meng-Chyi Wu, “Improved 1.3 um Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature”, IEEE Photonics Technology Lett. vol. 25, no. 1, pp. 97-99, January 2013.
  [ DOI:10.1109/LPT.2012.2229700 ]
• Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Te-Huan Liu, Chun-Wei Pao, Chien-Cheng Chang, Si-Chen Lee and Shih-Yen Lin*, “Low-temperature grown graphene films by using molecular beam epitaxy”, Appl. Phys. Lett. vol. 101, no. 22, pp. 221911, November 2012.
  [ DOI:10.1063/1.4768948 ]

專利：

1. “Single-crystal Antimonene Prepared by MBE for Device Applications”, US patent 10541132 (Date of patent： January 21, 2020).
2. “Controllable Multi-Layer MoS2 Fabricated by Repeating Chemical Vapor Deposition Growth Procedures and Its Applications in Transistors”, US patent 10403744 (Date of patent： September 3, 2019).
3. “Layered Etching and Following Re-sulfurization of Molybdenum Disulfide”, US patent 10269564 (Date of patent： April 23, 2019).
4. “Device Performance Enhancement and Fermi Level Tuning of MoS2 Transistors by Using Post-Growth Low-Power Oxygen Plasma Treatment”, US patent under process US patent 10147603 (Date of patent： December 4, 2018)
5. “Transition Metal Dichalcogenide Hetero-structures Fabricated by Using Metal Deposition and Following Sulfurization for Device Applications”, US patent 9899537 (Date of patent： February 20, 2018)
6. “Directly Grown Graphene on Sapphire Substrates – The establishment of 2-D Crystal Hetero-structures”, US patent 9859115 (Date of patent： January 2, 2018)
7. “Transition Metal Dichalcogenide Transistors with Nanometer-Size Channel Lengths Fabricated on 2-D Crystal Hetero-structures”, US patent 9577049 (Date of patent： February 21, 2017).
8. “Fermi Level Tuning of Graphene Transistors by Using In-plane Gates”, US and China patents, U.S. patent 9525072 B2 (Date of patent： December 20, 2016)
9. “藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法”, 臺灣專利發明第 I 526559 號 (專利權期間： 2016.3.21-2032.4.5)
10. “石墨烯薄膜及電晶體的石墨烯通道之製備方法”, 臺灣專利發明第 I 503276 號 (專利權期間： 2015.10.11-2033.3.12)
11. “METHOD FOR MANUFACTURING GRAPHENE FILM AND GRAPHENE CHANNEL OF TRANSISTOR”, U.S. patent 9029190 B2 (May 12, 2015)
12. “具有砷化銦鎵覆蓋層之長波長量子點紅外線偵測器”, 發明第I458576 號臺灣專利 (專利權期間： 2014.11.1-2029.9.24)
13. “量子點及量子井混合模式紅外線偵測器裝置及其形成方法”, 臺灣專利 (發明I400813號) (專利權期間： 2013.7.1-2028.8.25)
14. “Vertical Organic Transistor and Method of Fabricating the Same,” U.S. Patent 7560728.
15. “垂直有機電晶體及其製造方法”, 臺灣專利 (發明I299904號)
16. “量子點紅外線偵測器”, 臺灣專利 (發明I269355 號) (專利權期間： 2006.12.21-2024.12.28).
17. “高溫操作量子點紅外線偵檢器結構設計製作 (Structure Design and Fabrication of High-Temperature Operated Quantum Dot Infrared Photodetector)” 臺灣專利 (發明第480591號)