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Department of Applied Science 應用科學系
應用科學系
王吉祥教授

 

學歷:
美國北卡羅萊納州立大學 (North Carolina State University, Raleigh, U.S.A.) 物理博士,1991
國立交通大學電子研究所碩士,1977
國立交通大學電子物理系學士,1975


近年研究:
藍色光雷射(LASER), 發光二極體(LED) 半導體 材料- 氮化稼(GaN), p-
掺雜,以有效增益電洞(hole)濃度之 微觀物理 (microscopic Physics).

邀請會議論文 (Invited conference paper)
(1) J. Bernholc, B. Chen, Q.-M. Zhang, and C. Wang, “ Theory of Diffusion in GaAs/AlAs Superlattice,” 22nd Inter. Conf. On Physics of Semiconductors, Vancouver, Canada, August 1994.
(2) J. Bernholc, B. Chen, C. Wang, and Q.-M. Zhang , “ Theory of Diffusion in GaAs/Als Superlattices,” APS March Meeting, Pittsburgh, Pennsylvania, March 1994.
(3) Q.-M. Zhang, C. Wang, and J. Bernholc, “ Theory of Zn-enhanced Disordering in GaAs/AlAs Superlattices,” ASM-TMS Symposium on Diffusion in Semiconductors, Denver, Colorado, February 1993.
(4) Q.-M. Zhang, C. Wang, and J. Bernholc, “ Theory of Impurity-Enhanced Interdifussion in GaAs/AlAs Superlattices,” Gordon Conference on Point Defects, Line Defects and Interfaces in Semiconductors, Plymouth, NH, July 1992.
(5) J. Bernholc. S.A. Kajihara, C. Wang, Q.-M. Zhang, and A. Antonelli,” Theory of Impurity and Defects in Semiconductors,” 20 th International School on the Physics of Semiconductor Compounds, Jaszowiec, Poland, May 1991.
(6) J. Bernholc, A. Antonelli, S.A. Kajihara, C. Wang, and R.F. Davis, “ Theory of Native Defects, Doping, and Diffusion in Diamond and SiC,” Fall Meeting of European Material Research Society, Strasbourg, November 1990.
(7) J. Bernholc, A. antonelli, S. Kajihara, C. Wang, and R.F. Davis, ” Native Defects and Doping in SiC and Diamonds,” APS March Meeting, Anaheim, California, March 1990.


期刊論文
(1) C. Wang and Q.M. Zhang," Hydrogen depassivation of the magnesium acceptor by beryllium in p-type GaN," Physics Letters A 374, 2374, 2010. (I.F. =1.711)
(2) C.-M. Chang, M.V. Kulkarni, C.-H. Chen, C. Wang, and C.M. Sun, “ Parallel Synthesis of 2-Sulphanylated bis-Benzimidazoles on Soluble Polymer Support,” J. Comb. Chem. 10, 466, 2008.(I.F.=3.301)
(3) C. Wang and Q-M. Zhang, “ Energetics and Self-Compensation of Li in GaAs,” Phys. Rev. B,70, 035201, 2004. (I.F.=3.172)
(4) C. Wang and Q.-M. Zhang, “ Hydrogen Passivation of Beryllium in GaAs,” Phys. Rev. B 64 , 195204, 2001. (I.F.=3.172)
(5) C. Wang and Q- M. Zhang, “ Amphoteric Charge States and Diffusion Barriers of Hydrogen in GaAs,” Phys. Rev. B 59, 4864, 1999. (I.F.=3.172)
(6) J. Bernholc, B. Chen, Q. Zhang, C. Wang, and B. Yakobson “ Impurity Enhanced Disordering in Superlattices,” Materials Science Forum, 143-147, 593,1994.
(7) C. Wang, Q.M. Zhang, and J. Bernholc, “ Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices,” Phys. Rev. Lett. 69, 3789, 1992. (I.F.=6.944)
(8) J. Bernholc, S.A. Kajihara, C. Wang, A. Antonelli, and R.F. Davis, “ Theory of Native Defects, Doping and Diffusion in Diamond and Silicon Carbide,” Materials Science and Engineering B, 11, 265 (1992). (I.F.=1.330)
(9) Q.-M. Zhang, C. Wang, and J. Bernholc, ” Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices,” Materials Science Forum 83-87, 1351, 1992.
(10) J. Bernholc, A. Antonelli, C. Wang, and R.F. Davis, “ Self-Diffusion Mechanisms in Diamond, SiC, Si, and Ge,” Materials Science Forum 38-41,713, 1989.
(11) C. Wang, J. Bernholc, and R.F. Davis,”Formation Energies, Abundances, and the Electronic Structure of Native Defects in Cubic SiC,” Phys. Rev. B, Rapid Communications, 38, 12752, 1988. (I.F. =3.172)


專書論文
(1) J. Bernholc, B.Chen, Q. Zhang, C. Wang, S.K. Kajihara and D. Sullivan, ”Theory of Diffusion in GaAs/AlAs Superlattice,” Proc. 22nd Conf. Phys Semi. edited by D.J. Lockwood, (World Scientific), 2259, 1995.
(2) J. Bernholc, S.A. Kajihara, C. Wang, A. Antonelli, and R.F. Davis, ”Theory of Native Defects, Doping, and Diffusion in Diamond and SiC,” in Properties and Applications of SiC,Natural and Synthetic Diamond and Related Materials, Symp. Proc. of E-MRS, 234, edited by A.A. Gippius, R. Helberg, and J.P.F. Sellschop, Mat. Sci. Eng. B11, 265,1992.
(3) Q.-.M. Zhang, C. Wang, and J. Bernholc ,”Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices,” in Proc. 16th Intern. Conf. on Defects in Semiconductors, edited by G. Davis, Bethehem, Pennsylvannia, July 1991.
(4) C. Wang, J. Bernholc, and R.F. Davis,”Native Defects, Diffusion, Self-compensation and Boron Doping in Cubic Silicon Carbide,” in Diamond, Boron Nitride, Silicon Carbide andRelated Wide Bandgap Semiconductors, edited by J.T. Glass, R.F. Messier,and N. Fujimori, MRS Symposium Proceedings 162,475,1990.
(5) A. Antonelli, C. Wang, J. Bernholc, and R.F. Davis, “Native Defects in Diamonds, SiC, and Si : Energetics and Self-Diffusion,” in Atomic Simulations in Materials Science, edited by Tersoff, D. Vanderbilt, and V. Vitek MRS Symposium Proceedings 141, 249, 1989.
(6) J. Bernholc, A. Antonelli, C. Wang, R.F. Davis, and S.T. Pantelides,”Defect Abundances and Diffusion Mechanisms in Diamond, SiC, Si, and Ge,” in Atomistic Simulation of Materials, edited by V. Vitek and D.J. Srolovitz, Plenum, p.33, 1989.
(7) J. Bernholc, A. Antonelli, C. Wang, and R.F. Davis, ”Native Defects and Self-Diffusion in Diamond and Si,” 19th Intern. Conf. on the Physics of Semiconductors, edited by W. Zawadzki, Institute of Physics, Polish Academy of Science, p. 1115,1988.


會議論文
(1) Q.M. Zhang, Xi. wang, and C. Wang ,"First-principles study of Hydrogen depassivation of the Mg acceptor by Be GaN," APS March Meeting, 2010 , Portland,U.S.A.
(2) C. Wang,"Hydrogen depassivation of the magnesium acceptor by beryllium in p-type GaN," February 2010, Annual Meeting of the Physical Society of the Republic of China, Tainan, Taiwan
(3) C.Wang,"Ab initio studies on the enhancement of beryllium doping in wurtzite GaN," february, 2009,Annal Meeting of the Physical Society of the Republic of China, chunghua, Taiwan.
(4) C. Wang, “ The enhancement of P-type doping in Be-doped GaN,” February 2008, Annual Meeting of the Physical Society of the Republic of China, Hsinchu, Taiwan.
(5) C. Wang, “Hydrogen passivation of beryllium in p-type GaAs,” Physics bimonthly, 24,1, 195 (2002) February 2002, Annual Meeting of the Physical Society of the Republic of China, Taichung, Taiwan.
(6) C. Wang, “Passivation mechanisms of hydrogen in Zn- and Be-doped GaAs,” Physics Bimonthly, 21,1, 52 (2000) February 2000, Annual Meeting of the Physical Society of the Republic of China, Tainan, Taiwan.
(7) C. Wang, “ Amphoteric Diffusion Barriers of Hydrogen in GaAs,”Physics Bimonthly 21,1,187 (1999) February 1999, Annual Meeting of the Physical Society of the Republic of China, Taipei, Taiwan.
(8) C. Wang, “Investigation of the Charged States of Hydrogen in Crystalline GaAs,” Physics Bimonthly, 20,1, 185 (1998),February 1999, Annual Meeting of the Physical Society of the Republic of China, Chungli, Taiwan.
(9) C.S. Wu, and C. Wang, “ Density-Functional Calculations for the Interface between the Metal and Semimetal”, Bull. Amer, Phys. Soc. 41, 207 (1996), APS March Meeting, St. Louis, Missouri, U.S.A.
(10) C.S. Wu, and C. Wang, “ Self-Consistent Calculation for the P-N Junction”, Bull. Amer. Phys. Soc. 41, 207(1996), APS March Meeting, St. Louis, Missouri, U.S.A.
(11) K-C. Twu, Amy H.-M. Chu, L.H. Shyu, and C. Wang, “ Threshold Current Measurement and Analysis in Semiconductor Laser Diodes”, Physics Bimonthly, 18,1, 184(1996). Annual Meeting of the Physical Society of the Republic of China, Taichung, Taiwan.
(12) C. Wang, “ The Energy Calcualtions of Hydrogen in Crystalline semiconductors,” Physics Bimonthly, 18,1, 141(1996), Annual Meeting of the Physical Society of the Republic of China, Taichung, Taiwan.
(13) M.-T. Twu, K.- C. Hsu, Amy H.-M. Chu, and C. Wang, “ Wavelength and Temperature Dependence of the Threshold Current in Semiconductor Lasers,” Physics Bimonthlt, 17,1, 155(1995). Annual Meeting of the Physical Society of the Republic of China, Kaohsiung, Taiwan.
(14) K.-C. Hsu, M.-T. Twu, Amy H.-M. Chu, and C. Wang, “ Emipirical Pseudopotential Calculations on the Band Structure of II-VI Compound Semiconductors,” Physics Bimonthly, 155(1995). Annual Meeting of the Physical Society of the Republic of China, Kaohsiung, Taiwan.
(15) J. Bernholc, B. Chen, Q. Zhang, C. Wang, and B. Yakobson, “ Impurity-Enhanced Disordering in Superlattices,” 17th Inter. Conf. on Defects in Semiconductors, Gmunden, Austria (1993).
(16) Q.-M. Zhang, C. Wang, and J. Bernholc, “ Theory of Zn-Enhanced Interdiffusion in GaAs/AlAs Superlattices,” Bull. Amer. Phys. Soc. 38, 338(1993), APS March Meeting Seattle, Washington.
(17) Q.-M. Zhang, C. Wang , and J. Bernholc,.“ Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices,” Bull. Amer. Phys. Soc. 37,251 (1992), APS March Meeting, Indianapolis, Indiana.
(18) Q-.M. Zhang, C. Wang, and J. Bernholc,” Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices,” 16th Intern. Conf. on Defects in Semiconductors, Bethehem, Pennsylvania, July 1991.
(19) Q.-M. Zhang, C. Wang, and J. Bernholc, ”Adiabatic Trajectories in ab-intio Molecular Dynamics: An Efficient way to Map Out Potential Energy surfaces,” Bull. Amer. Phys. Soc. 36, 814(1991), APS March Meeting, Cincinnati, Ohio.
(20) C. Wang, Q.-M. Zhang, and J. Bernholc, ”Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices,” Bull. Amer. Phys. Soc. 36, 814 (1991), APS March Meeting, Cincinnati, Ohio.
(21) C. Wang, J. Bernholc, and R.F. Davis, “Native Defects, Diffusion, Self-Compensation and Boron-doping in Cubic Silicon Carbide,” MRS Fall Meeting, Boston, Massachusetts, November 1989.
(22) J. Bernholc, C. Wang, and R.F. Davis, “Defect Energetics, Self-Compensation and Electronic Properties of Cubic (Zinc-Blende) SiC,” Bull. Amer. Phys. Soc. 34, 552 (1989), APS March Meeting, St. Louis, Mossouri.
(23) C. Wang, J. Bernholc, and R.F. Davis, “Defect Energentics, Self-Compensation and the Electronic Properties of Cubic (Zinc-Blende) SiC,” Meeting of Southeastern Section of the American Physical Society, Bull. Amer. Phys. Soc. 33, 2215(1988), Raleigh, North Carolina, November 1988.
(24) A. Antonelli, C. Wang, J. Bernholc, and R.F. Davis, “Native Defects in Diamond, SiC, and Si: Energetics and Self Diffusion,” MRS Fall Meeting, Boston, Massachusetts, November 1988.
(25) C. Wang, and R.F. Davis, “Self-Diffusion Mecjanisms in Diamond, SiC,Si,and Ge,” J. Bernholc, A. Antonelli, 15th Intern. Conf. on Defects in Semiconductors, Budapest, Hungary, August, 1988.

(26) C. Wang, and R.F. Davis, “Native Defects and Self-Diffusion in Diamond and SiC,” J. Bernholc, A. Antonelli, 19th Intern. Conf. on the Physics of Semiconductors, Warsaw, Poland, August 1988.

專題研究計畫
(1)
行政院國家科學委員會專題研究計畫
鈹有效p-型掺雜氮化稼晶體的研究
(Efficient p-type doping of GaN using beryllium)
NSC 92-2112-M-143-001-
(2)
行政院國家科學委員會專題研究計畫
氫在p-型氮化稼晶體的披覆鈹受質的微觀機制
(Hydrogen passivation of beryllium acceptors in p-type GaAs)
NSC 91-2112-143-001
(3)
行政院國家科學委員會專題研究計畫
-鋅複合體在砷化稼晶體的結構、運動學、和披覆機制的研究
(Structure, kinetics, and passivation of Li-Zn complexes in GaAs)
NSC 90-2112-M-143-002
(4)
行政院國家科學委員會專題研究計畫
鋰在砷化稼晶體的平衡結構和擴散研究
(Equilibrium structures and diffusion of lithium in crystalline GaAs)
NSC 89-2112-M-259-013
(5)
行政院國家科學委員會專題研究計畫
砷化稼晶體淺能階受質的氫披覆研究
(Hydrogen passivation of shallow-level acceptors in GaAs)
NSC 89-2112-M-259-004
(6)
行政院國家科學委員會專題研究計畫
Norm Conserving, ab initio
虛位能的發展
(The Developing of Norm-Conserving, ab initio Pseudopotentials)
NSC 87-2112-M-259-001
(7)
行政院國家科學委員會專題研究計畫
氫在砷化稼中電荷狀態研究
(Investigation of The Charged States of Hydrogen in GaAs) NSC 86-2112-M-155-001
(8)
行政院國家科學委員會專題研究計畫
氫在半導體中能態計算
(The Energy Calculations of Hydrogen in Crystalline Semiconductors)
NSC 84-2112-M-155-001


學術榮譽
(1)
八十四學年度行政院國家科學委員會甲種獎勵

 
姓名 王吉祥
現職 教授
學歷 美國北卡羅萊納州立大學物理博士
專長 凝體物理
聯絡電話 (089)517976校內分機6413
email cwang@nttu.edu.tw