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分類清單
陳孟炬副教授

 

一、經歷

國立台東大學 應用科學系 專任助理教授 (2011 ~  )

國立台東大學 學務處 學生職涯發展中心主任 (2013 ~ 2015 )

        行政院原能會核能研究所 高聚光太陽能高科驗證發展中心 (2008 ~ 2011)

行政院原能會核能研究所 高聚光太陽能發電專案計畫 (2007 ~ 2011)

行政院原能會核能研究所 核能儀器組 (2006 ~ 2007)

南台科技大學 兼任助理教授 (2009 ~ 2010)

明志科技大學 兼任助理教授 (2008 ~ 2009)

明志技術學院 兼任講師 (2003 ~ 2006)



.、學術獎勵


行政院原子能委員會 核能研究所 研發工作績效優異獎(2009)
行政院原子能委員會 核能研究所 國際著名期刊刊載獎(2009)
行政院原子能委員會 核能研究所 研發工作績效優異獎(2010)
國防部入選全國績優國防訓儲人員(2010)
行政院原子能委員會 核能研究所 研發工作績效優異獎(2011)
 

三、國科會研究

1.二維碳結構之光電特性薄膜成長研究(2011/11/01~2013/07/31)

2.台灣東部區域戶外 HCPV 太陽能發電模組效能實測分析研究(2012/01~2012/12)

3.臺灣東部區域戶外HCPV太陽能發電模組效能實測分析研究(2013/01~2013/12)

4.臺灣東部區域聚光太陽能模組耐久性能實測研究(2014/01~2014/12)

 

 

 

 

 

 

 





四.、著作及學術活動

[1]. Meng-Chu Chen, Cheng-Liang Hsu, Ting-Jen Hsueh ”Fabrication of Humidity Sensor Based on Bilayer Graphene”IEEE Electron Device Letters., VOL. 35, NO. 5, P590-P592, MAY, (2014) (SCI). (IF:3.023)

[2]. Yu-Cheng Kuo, Meng-Chu Chen, Tsung-Te Lin, Yi-Ru Shiu, Hui Chen, “Rapid fabrication of organic/organic photonic bandgap films with tuneable mechanical properties using blended polymer spheres”Journal of Applied Polymer Science  131, 40276, (2014) (SCI). (IF:2.221)

[3]. Jei-Li Hou, Shoou-Jinn Chang, Meng-Chu Chen, Ting-Jen Hsueh, Jinn-Komg Sheu, Shuguang Li, "GaN-Based Planar p-i-n Photodetectors with Be-Implanted isolation ring", IEEE Transactions on Electron Devices VOL. 60, NO. 3, MARCH (2013) (IF:2.789) (SCI).

[4]. Meng-Chu Chen, and Ting-Jen Hsueh "Al-Doped Silicon-Based Thin Film Humidity Sensors Prepared via Metal Induced Method", ECS Journal of Solid State Science and Technology, Vol. 2 (11) P485-P487 (2013)

[5]. Jenn-Shyong Hwang, Jung-Tse Tsai, Kuang-I Lin, Ming-Hsun Lee, Chiang-Nan Tsai, Hon-Way Lin, Shangjr Gwo, and Meng-Chu Chen “Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations” Applied Physics Express 3 (2010), 102202, (IF:2.223) (SCI).

[6]. K.I. Lin, J.T. Tsai, J.S. Hwang, M.C. Chen, "Terahertz radiation by spontaneous polarization fields in InN" Physica E 42 (2010) 2669–2672, (SCI).

[7]. C. H. Lin, W. Y. Uen, S. M. Lan, Y. C. Huang, S. M. Liao, Z. Y. Li, T. N. Yang, C. T. Ku, M. C. Chen, Y. H. Huang “Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N2 and H2 atmospheres” Journal of Applied Physics, 105, 053107 (2009) (IF:2.255) (SCI).

[8]. M.D. Yang, A.H.M. Chu, J.L. Shen, Y.H. Huang, T.N. Yang, M.C. Chen, C.C. Chiang, S.M. Lan, W.C. Chou, Y.C. Lee, “Improvement of luminescence from Si nanocrystals with thermal annealing in CO2” Journal of Crystal Growth. Volume 310, Issue 2, 313-317 (2008) (IF:1.757) (SCI).

[9]. Y. K. Fu, C. H. Kuo, C. J. Tun, C.W. Kuo, W.C. Lai, G. C. Chi, C. J. Pan, M. C. Chen, H. F. Hong and S. M. Lan, “Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition”, Journal of Crystal Growth. Volume 310, Issue 20, 4456-4459 (2008) (IF:1.757) (SCI).

[10]. Z. Y. Li, S. M. Lan, W. Y. Uen, Y. R. Chen, M. C. Chen, Y. H. Huang, C. T. Ku, S. M. Liao, T. N. Yang, S. C. Wang, G. C. Chi, “Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers” J VAC SCI TECHNOL A, 0734-2101, (2008) (IF:1.76) (SCI).

[11]. K. I. Lin, J. T. Tsai, T. S. Wang, J. S. Hwang, M. C. Chen, and G. C. Chi “Drift current dominated terahertz radiation from InN at low-density excitation” Appl. Phys. Lett. 93, 262102 (2008) (IF: 3.726) (SCI)

[12]. J. Y. Chen, P. J. Huang, M. C. Chen, M. Y. Chen, S. C. Hung, C. H. Nien, S. M. Lan, B. J. Pong, C. J. Pan, C. J. Tun, F. Ren, C. Y. Chang, and S. J. Pearton, G. C. Chi, “Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy” Appl. Phys. Lett. 92, 162103 (2008) (IF: 3.726) (SCI)

[13]. M. D. Yang, J. L. Shen, M. C. Chen, C. C. Chiang, S. M. Lan, and T. N. Yang, M. H. Lo, H. C. Kuo, and T. C. Lu, P. J. Huang, S. C. Hung, and G. C. Chi, W. C. Chou “Optical studies of InN epilayers on Si substrates with different buffer layers” Journal of Applied Physics, Volume 102, Issue 11, pp. 113514-113517 (2007) (IF:2.255) (SCI).

[14]. Y. H. Huang, Z. Y. Li, M. C. Chen, C. T. Ku, Y. R. Chen, W. Y. Uen, C. H. Lin, S. M. Lan, T. N. Yang, and J. L. Shen “Luminescence Mechanism of SiOx Films Grown by Atmospheric-Pressure Halide Chemical Vapor Deposition” Japanese Journal of Applied Physics Vol. 46, No. 11, pp. 7542-7544, (2007) (IF:1.309) (SCI).

[15]. K. J. Chang, M. C. Chen, C. J. Kao, Z. Y. Li, S. M. Lahn, W. Y. Uen, G. C. Chi and J. Y. Chang, “Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method” J. Vac. Sci. Technol. Volume 25, Issue 4, pp. 701-705, (2007) (IF:1.76) (SCI).

[16]. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, and G. C. Chi, “Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring”, Appl. Phys. Lett., vol.89, no.18, pp.183509-1-183509-3, (2006). (IF: 3.726) (SCI)

[17]. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi “Planar GaN p-i-n Photodiodes With n+-conductive Channel Formed by Si implantation” Appl. Phys. Lett. 88, 203508 (2006). (IF: 3.726) (SCI)

[18]. M. C. Chen, J. K. Sheu, C. J. Kao, C. J. Tun, G. C. Chi “Planar Ultraviolet photodetectors Formed by Si Iimplantation into p-GaN” Journal of the Electrochemical Society 153, G799, (2006). (IF:2.356) (SCI).

[19]. W. Y. Uen, Z. Y. Li, Y. C. Huang, M. C. Chen, T. N. Yang, S. M. Lan, C. H. Wu, H. F. Hong, G. C. Chi, “Heteroepitaxial Growth of GaAs on Si by MOVPE using a-GaAs/a-Si double buffer layers” Journal of Crystal Growth. 295, pp. 103-107, (2006) (IF:1.757) (SCI).

[20]. C. J. Kao, M. C. Chen, C.J. Tun, G. C. Chi, J. K. Sheu, M. L. Lee, W. C. Lai, F.Ren and S.J.Pearton “Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors”, Journal of Applied Physics, Vol. 98, 064506 (2005). (IF:2.255) (SCI)

[21]. C. J. Kao, J. K. Sheu, W. C. Lai, M. L. Lee, M. C. Chen and G. C. Chi , “Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors”, Appl. Phys. Lett., Vol. 85, No. 8, pp.1430-1432, (2004). (IF: 3.726) (SCI)

[22]. M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, and S. J. Chang, C. J. Kao, C. J. Tun, M. C. Chen, W. H. Chang, and G. C. Chi, J. M. Tsai, “Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer”, J. Appl. Phys., Vol. 94, No. 3, pp.1753-1757, (2003). (IF:2.255) (SCI)

[23]. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. C. Chen, C. J. Kao, J. M. Tsai and G. C. Chi, “GaN Schottky barrier photodetectors with a low-temperature GaN cap layer”, Appl. Phys. Lett., Vol. 82, No. 17, pp.2913-2915, (2003). (IF: 3.726) (SCI)

[24]. L. S. Yeh, M. L. Lee, J. K. Sheu, M. C. Chen, C. J. Kao, G. C. Chi, S. J. Chang and Y. K. Su, “Visible-blind GaN p-i-n photodiodes with an A0.12lGa0.88N/GaN superlattice structure”, solid-state Electronics, Vol. 47, pp.873-878, (2002). (IF:1.21) (SCI)

[25]. J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, M. C. Chen and G. C. Chi, “Planar GaN ultraviolet photodetectors formed by Si implants into p-GaN”, Applied Physics Letters, Vol. 81, No. 22, pp.4263-4265, (2002). (IF: 3.726) (SCI).


Conferences :

1. C. J. Kao, J. K. Sheu, M. C. Chen, M. L. Lee, C. J. Tun and G. C. Chi, ”Low-dark current, high-sensitivity GaN MSM UV photodetectors with low-temperature GaN insulator layer”, EDMS 2003, Keelung, Taiwan, 2003.
國際性研討會

2. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, G. C. Chi, ” GaN-based UV Photodetectors ”, EDMS 2003, Keelung, Taiwan, 2003.
國際性研討會

3. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi,” Planar GaN-based UV Photodetectors formed by Si Implantation”, 260th Electrochemical Society Joint International Meeting, Hawaii, USA, 2004.
國際性研討會

4. Meng-Chu Chen, Yu-Hsiang Huang, Zhen-Yu Li, Ying-Ru Chen, Chien-Te Ku, Wu-Yih Uen, Tsun-Neng Yang, Shan-Ming Lan, “The polycrystalline Si with continuous surface and large grain size formed on glass substrate by aluminum-induced crystallization method” Accepted by International Conference on Crystal Growth (ICCG-15), USA, 2007.
國際性研討會

5. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, L. S. Yeh, G. C.Chi. “Planar GaN - based pin photodiodes” The European Materials Research Society (E-MRS Spring Meeting 2006), Nice, France, 2006.05
國際性研討會

6. Zhen-Yu Li, Ying-Ru Chen, Wu-Yih Uen, Chien-Te Ku, Meng-Chu Chen, Yu-Hsiang Huang, Shan-Ming Lan, Tsun-Neng Yang, Chin-Chen Chiang, “Heteroepitaxial Growth of InN epilayer on Si(111) by APMOCVD using LT-InN/HT-AlN double-buffer layers” Accepted by International Conference on Crystal Growth (ICCG-15), USA, 2007.
國際性研討會

7. Ying-Ru Chen, Zhen-Yu Li, Wu-Yih Uen, Chien-Te Ku, Meng-Chu Chen, Yu-Hsiang Huang, Shan-Ming Lan, Tsun-Neng Yang, Chin-Chen Chiang, “Heteroepitaxial Growth of GaAs on Si by MOVPE using a-GaAs/a-Si double buffer layers” Accepted by International Conference on Crystal Growth (ICCG-15), USA, 2007.
國際性研討會

8. C. C. Lin (
林健均), J. Y. Chen (陳景宜), M. C. Chen (陳孟炬), and G. C. Chi (紀國鐘), “Fabrication of dye-sensitized solar cell with a TiO2 thin film” Accepted by 台灣光學年會研討會, Taiwan, 2007. 國內研討會

9. Yu-Hsiang Huang; Zhen-Yu Li; Meng-Chu Chen; Ying-Ru Chen; Chien-Te Ku; Tsun-Neng Yang; Shan-Ming Lan; Wu-Yih Uen; Shing-Chung Wang, “The polycrystalline Si with continuous surface and large grain size formed on glass substrate by aluminum-induced crystallization method” International Conference On Crystal Growth, USA, 2007.
國際性研討會

10. Y. K. Fu, C. J. Tun, W.C. Lai, C. H. Kuo, G. C. Chi, M. C. Chen and H. F. Hong, “Investigation of InN quantum dots grown on GaN with low indium composition In0.04Ga0.96N interlayer by metalorganic chemical vapor deposition” First International Conference on White LEDs and Solid State Lighting, 2007.
國際性研討會

11. Y. K. Fu, C. J. Tun, C. W. Kuo, C. H. Kuo, M. C. Chen, H. F. Hong and S. M. Lan, “Characterization and Analysis of III-nitrides Solar Cells with PIN and MQW Structures Grown by MOCVD” 14th International Conference of Metalorganic Vapor Phase Epitaxy, 2008.
國際性研討會

12. Y. K. Fu, C. J. Tun, C. W. Kuo, C. H. Kuo, M. C. Chen, H. F. Hong and S. M. Lan, “The Investigation of III-nitrides Solar Cells with Absorption Layer of MQW Structure Grwon by MOCVD” International Workshop on Nitride semiconductors, 2008.
國際性研討會

13. C.J. Kao, M.C. Chen, K.S. Liu, C.L. Chang, and C.H. Wu “Current-voltage analyses of III-V epitaxial thin-film solar cells under high concentrated sunlight” International Thin Films Conference, 2009.
國際性研討會

14. Chi-Joe Kao, Meng-Chu Chen, Keng-Shen Liu, Chao-Wei Huang, Kai-Hsiang Lin, Chih-Hung Wu “A method to analyze series resistance and diode ideality factor of InGaP/InGaAs/Ge tandem solar cell ” International Electron Devices and Materials Symposia, 2009.
國際性研討會

15. K. I. Lin, J. T. Tsai, J. S. Hwang, and M. C. Chen, “Polarity determination of InN by terahertz radiation”, the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures, Kobe, Japan, July 19-24, 2009, Poster Session Th-mP65, p. 284.
國際性研討會

16. J. T. Tsai, K. I. Lin, Y. T. Lu, S. Gwo, M. C. Chen, G. C. Chi, and J. S. Hwang*, “Characterization of photoelastic effects on the optical properties of strained InN films”, the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures, Kobe, Japan, July 19-24, 2009, Poster Session Th-mP67, p. 286.
國際性研討會

17. K. I. Lin, J. T. Tsai, T. S. Wang, J. S. Hwang, M. C. Chen, and G. C. Chi, “Drift current dominated terahertz radiation from InN at low-density excitation”,
第二十七屆光譜技術與表面科學研討會, Session FPhotonics (II)-F2 (2009)

18. Kuang-I Lin, Jung-Tse Tsai, Jenn-Shyong Hwang, Hon-Way Lin, Shangjr Gwo, and Meng-Chu Chen,
Terahertz radiation mechanism of native n-type InN with different carrier concentrations, the APS March Meeting, Session B11.00001, Dallas, Texas, Mar. 21–25, 2011.

19. K. I. Lin, J. T. Tsai, J. S. Hwang*, M. H. Lee, H. W. Lin, S. Gwo, and M. C. Chen,
Terahertz radiation mechanism of native n-type InN with different carrier concentrations, B4-2, 2011中華民國物理年會, 國立臺灣師範大學.

20. J. T. Tsai, K. I. Lin, and J. S. Hwang, M. C. Chen
The internal quantum efficiency of InN/GaN multiple quantum wells with varying well width, the International Photonics Conference (IPC2011)paper number: PA-FR-08, 2011


21.
陳孟炬、林政佑、林政緯、周俊宇, 『深層海水與溫泉水整合溫差發電可行性探討』中華民國力學研討會, 國立中央大學, (2012)

 

  22. M. C. Chen, Y. P. Huang, C.W. Chen, S. C. Hung, C. C. Cheng, C.W.Li, H.C. Hsieh, H. C.Wu and G.C. Chi,Large-Area Graphene Grown with a Novel rapid Cooling Method222th Electrochemical Society,H1-3500, Hawaii, USA, (2012). 國際性研討會

 

  23. Kuang-I Lin, Kuo-Lung Lin, Chia-Hung Hsu, Jenn-Shyong Hwang, Meng-Chu Chen and Shangjr Gwo,Valence-band splittings in wurtzite InN studied by temperature-dependent photoreflectance and photoluminescence,中華民國物理年會, 國立東華大學. 2013 -----( 物理年會---佳作 )

 

  24. M. C. Chen*, T. J. Hsueh, T. T. Lin, C. J. Kao High Sensitivity Humidity Sensors of Aluminum-induced Crystallization of Amorphous Silicon, EMRS – Strasbourg, France (2013) 國際性研討會

 


Patent :

1.
許進恭, 陳孟炬, 李明倫 紀國鐘.“紫外光檢測器及製程方法中華民國專利號202698 (2004)

2.
許進恭, 陳孟炬, 李明倫, 紀國鐘. “平面式光檢測器中華民國專利號I 239656 (2005)

3.
許進恭, 陳孟炬, 李明倫, 紀國鐘. “ULTRAVIOLET DETECTOR AND MANUFACTURE METHOD THEREOF ”USA, US7,009,185 B2 (2006)

4.
黃昱翔, 陳孟炬, 藍山明, 李鎮宇, 古建德 “ITO薄膜低溫多晶矽薄膜太陽
電池之製備方法中華民國專利(取得)&美國專利(USA)申請中

5.
陳孟炬, 籃山明, 黃昱翔, 李鎮宇, 蘇郁涵白金奈米粒子被覆方法中華民國專利&
美國專利(USA)申請中

6.
陳孟炬, 籃山明, 李鎮宇, 古建德, 蘇郁涵金屬量子點敏化太陽能電池元件之製備方法中華民國專利&美國專利(USA)申請中

姓名 陳孟炬
現職 副教授
學歷 中央大學 光電所博士
專長 高效能太陽電池元件與發電系統研發、光電半導體材料與元件開發研究
聯絡電話 (089)517969 校內分機 6418
email mchen@nttu.edu.tw